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| Mini PROFET(R) BSP 350 * High-side switch * Short-circuit protection * Overtemperature protection with hysteresis * Overload protection * Overvoltage protection * Reverse battery protection1) * Switching inductive load * Clamp of negative output voltage with inductive loads * Maximum current internally limited Package: SOT 223 Type Ordering code Q67000-S227 Pins: 1 IN 2 Vbb 3 OUT MiniPROFET 4 3 2 1 4 Vbb BSP 350 Maximum Ratings Parameter Supply voltage Load current self-limited Maximum current through input pin (DC) see internal circuit diagram Symbol Values Vbb 50 IL IL(SC) IIN 15 Unit V A mA mJ C W K/W Inductive load switch-off energy dissipation Operating temperature range Storage temperature range Max. power dissipation (DC)2) TA = 25 C Thermal resistance chip - soldering point: chip - ambient:2) EAS Tj Tstg Ptot RthJS RthJA + V bb 2/4 5 -40 ...+150 -55 ...+150 1.7 17 72 Control Circuit OUT 3 R IN IN 1 RL Temperature Sensor GND 1 2) ) For 12 V applications only. Reverse load current only limited by connected load. BSP 350 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection Semiconductor Group Page 1 of 6 08.04.97 BSP 350 Electrical Characteristics Parameter and Conditions at Tj = 25 C, Vbb = 13.5V unless otherwise specified Symbol min Values typ Unit max Load Switching Capabilities and Characteristics On-state resistance (pin 2 to 3) IL = 0.07 A, pin 1 = GND Tj = 25C Tj = 150C Vbb = 6 V, Tj = 25C Nominal load current (pin 2 to 3) ISO Standard: VON = Vbb - VOUT = 0.5 V TS = 85 C Turn-on time to 90% VOUT Turn-off time to 10% VOUT RL = 270 Slew rate on 10 to 30% VOUT, RL = 270 Slew rate off 70 to 40% VOUT, RL = 270 RON ---0.07 4 8 5 -- 5 10 10 -- IL(ISO) A ton toff dV /dton -dV/dtoff ----- 60 70 4 2 100 140 6 6 s V/s Input Tj = - 40...+150C OFF state input current RL = 270 , VOUT 0,1V ON state input current, (pin 1 grounded)3) Tj = - 40...+150C IIN(off) IIN(on) --- -0.3 0.05 1 mA mA Operating Parameters Operating voltage (pin 1 grounded)4) Tj = - 40...+150C Leakage current (pin 2 to 3, pin 1 open) Tj = 25C Tj =150C Vbb(on) Ibb(off) 4.9 --- -1 1.2 45 10 10 V A 3 4 ) Driver circuit must be capable to drive currents >1mA. ) Below V =4.5 V typ. without chargepump, V bb out Vbb - 2 V Semiconductor Group Page 2 08.04.97 BSP 350 Parameter and Conditions at Tj = 25 C, Vbb = 13.5V unless otherwise specified Symbol min Values typ Unit max Protection Functions 5 Current limit (pin 2 to 3) ) Tj = 25C Tj = -40...+150 IL(SC) Tjt Tjt Vbbin(AZ) VON(CL) EAS RIN Thermal overload trip temperature Thermal hysteresis Overvoltage protection Tj =-40...+150C Output clamp (ind. load switch off) at VOUT = Vbb - VON(CL) Inductive load switch-off energy dissipation6) Reverse battery resistor (pin 1 to 2) 0.2 0.1 150 -50 ---- 0.5 --20 56 56 -1 1 1.2 ----5 -- A C K V V mJ k Reverse Diode Continious reverse drain current Pulsed reverse drain current Diode forward on voltage IF = 0.2 A, IIN = 0.05 mA Tj = 25C Tj = 25C IS ISM VSD ---- --0.9 0.2 0.8 1.2 A A V 5) load current limits onset at IL * Ron approx. 1V short circuit protection: combination of current limit and thermal overload switch off while demagnetizing load inductance, dissipated energy is EAS= (VON(CL) * iL(t) dt, VON(CL) 2 ) approx. EAS= 1/2 * L * IL * ( VON(CL)-Vbb 6) Semiconductor Group Page 3 08.04.97 BSP 350 Max allowable power dissipation Ptot = f (TA,TSP) Ptot [W] 8 7 6 5 T 4 3 2 TA 1 0 0 25 50 75 100 125 150 TA, TSP[C] 1 0 0 5 10 15 20 25 Vbb [V] SP 4 3 2 Typ. on state resistance (Vbb- pin to OUT pin) RON = f (Vbb); IL = 70 mA; Tj = 25C RON [] 8 7 6 5 On state resistance (Vbb- pin to OUT pin) RON = f (Tj);Vbb = 13.5 V;IL = 70 mA RON [] 10 9 Typ. short circuit current IL(SC) = f(Tj); Vbb = 13.5V ILSC [] 0.7 0.6 8 7 6 5 typ 4 3 2 0.1 1 0 -50 -25 0 25 50 75 100 125 150 TJ [C] 0 -50 -25 0 25 50 75 100 125 150 TJ [C] 0.3 98% 0.5 0.4 0.2 Semiconductor Group Page 4 08.04.97 BSP 350 Test circuit Typ. short circuit current IL(SC) = f(VON); Vbb = 13.5V; Tj = 25C ILSC [] 0.7 Vbb 2/4 3 Iin 1 Vout 0.4 Von 0.6 0.5 Vin 0.3 0.2 Turn on conditions 0.1 0 0 2 4 6 8 VON [V] Typ. short circuit current IL(SC) = f(t); Vbb = 13.5V no heatsink; Parameter: TjStart IL(SC)[mA] 1000 800 600 400 Chargepump threshold VON = f (Vbb) 125C 200 25C -40C 4 2 0 -0,5 0,5 1,5 2,5 3,5 4,5 5,5 typ. max. t[s] 2 4 6 8 Semiconductor Group Page 5 08.04.97 BSP 350 Package: all dimensions in mm. SOT 223/3: Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstrae 73, 81541 Munchen (c) Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! 1 Critical components of the Semiconductor Group of Siemens AG, may only be used in life-support devices or 2 systems with the express written approval of the Semiconductor Group of Siemens AG. 1) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Semiconductor Group Page 6 08.04.97 |
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